Ceramics-Silikáty 39 (2) 59-62 (1995)

MODEL OF ELECTRIC CONDUCTIVITY OF THICK-FILM RESISTORS, PART 4 - VOLTAGE DEPENDENCE OF RESISTIVITY

A. Kubový

In the measurements, use was made of model films 15ą Nm in thickness, with the conductive component of Bi₂Ru₂O₇ dispersed in glass having the composition 66 % PbO + 32 % SiO + 1.5 % Al₂O₃. The courses of the voltage dependence of resistivity are interpreted as the Poole-Frenkel phenomenon on isolated admixture centres in glass. The measurement on the isolated admixture centres was made possible by selecting samples having the concentration of the conductive component closely below the critical concentration (the percolation limit). As predicted, the charge transport proceeded by the hopping mechanism in the empty zone of delocalized states, which, according to an analysis of the results, lies by 0.76ą0,05 eV above the narrow impurity band [3,10].