ISSN 0862-5468 (Print), ISSN 1804-5847 (online) 

Ceramics-Silikáty 62, (1) 97 - 107 (2018)


THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
 
Horňák Peter 1,2, Kottfer Daniel 3, Kaczmarek Lukasz 4, Kianicová Marta 1, Balko Ján 2, Rehák František 1, Pekarčíková Miriam 5, Čižnár Peter 5
 
1 Alexander Dubček University of Trenčín, Faculty of Industrial Technologies, I. Krasku 491/30, 020 01 Púchov, Slovak Republic
2 Slovak Academy of Sciences, Institute of Materials Research, Watsonova 47, 040 01 Košice, Slovak Republic
3 Technical University of Košice, Faculty of Mechanical Engineering, Department of Mechanical Technologies and Materials, Mäsiarska 74, 040 01 Košice, Slovak Republic
4 Lodz University of Technology, Institute of Materials Science and Engineering, 1/15 Stefanowskiego Str., 90-924 Lodz Poland
5 Technical University of Košice, Faculty of Mechanical Engineering, Department of Industrial Engineering and Management, B. Němcovej 32, 042 00 Košice, Slovak Republic

Keywords: WC/C layer, DC magnetron sputtering, N₂+SiH₄, Annealing, Properties
 

Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.


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doi: 10.13168/cs.2018.0001
 
 
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