ISSN 0862-5468 (Print), ISSN 1804-5847 (online) 

Ceramics-Silikáty 56, (2) 122 - 126 (2012)


Mn DOPING OF GaN LAYERS GROWN BY MOVPE
 
Šimek Petr 1, Sofer Zdeněk 1, Sedmidubský David 1, Jankovský Ondřej 1, Hejtmánek Jiří 2, Maryško Miroslav 2, Václavů Michal 3, Mikulics Martin 4
 
1 Dept. of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, 166 28 Prague 6, Czech Republic
2 Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Prague, Czech Republic
3 Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic
4 Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany

Keywords: Metalorganic vapor phase epitaxy, Nitrides, Magnetic materials, Semiconducting III-V materials
 

In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)2Mn was used as a Mn – precursor. The flow of the Mn precursor was 0.2-3.2 µmol.min-1. The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar, the temperature 1050oC and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer’s properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.


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