Ceramics-Silikáty 36, (2) 73 - 82 (1992)

On the basis of a model of electron transport in TFR (thick-film resistors}, based on the tunnelling of electrons assisted by phonons between localized impurity states in glass, a simple theory of piezoresistivity has been worked out. From the relationship derived and from the experimental data, it is possible to obtain the concentration values of the impurity centres. Using the concepts of the mechanism involved in the formation of film macrostructure, an interpretation of the experimental course of lnN = f(v/v_c) was proposed.