Ceramics-Silikáty 56, (2) 122 - 126 (2012) |
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Mn DOPING OF GaN LAYERS GROWN BY MOVPE
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Šimek Petr 1, Sofer Zdeněk 1, Sedmidubský David 1,
Jankovský Ondřej 1,
Hejtmánek Jiří 2,
Maryško Miroslav 2,
Václavů Michal 3,
Mikulics Martin 4
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1 Dept. of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, 166 28 Prague 6, Czech Republic
2 Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Prague, Czech Republic
3 Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic
4 Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany
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Keywords: Metalorganic vapor phase epitaxy, Nitrides, Magnetic materials, Semiconducting III-V materials
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In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without
undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers
(MCp)2Mn was used as a Mn – precursor. The flow of the Mn precursor was 0.2-3.2 µmol.min-1. The deposition of Ga1-xMnxN
layers was carried out under the pressure of 200 mbar, the temperature 1050oC and the V/III ratio of 1360. For the growth
of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN.
The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the
whole deposition process. Another investigated parameter was the influence of nitrogen on the layer’s properties. A nearly
constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films. |
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