Ceramics-Silikáty 35, (4) 369 - 378 (1991) |
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SILICON NITRIDES AND OXYNITRIDES PREPARED IN HIGH-PRESSURE PLASMAS
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Svoboda Pavel 1, Taras Petr 2
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1 Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czechoslovakia
2 Institute of Plasma Physics, Czechoslovak Academy of Sciences, Pod vodárenskou věží 4, 182 11 Prague 8, Czechoslovakia
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The paper deals with preparation of silicon nitride powders with the use of atmospheric pressure plasma. It compares three basic routes: nitridation of plasma - pyrolyzed SiCl₄, SiCl₄ ammonolysis, and nitridation of the silicon powder (4 μm) in plasma. For sufficient active nitrogen creation under nitridation conditions as well as for chlorine elimination, the ammonia addition was clearly indicated to be necessary. Direct nitridation yields better product quality but the residence times of 0.1 s are yet short for significant nitridation of plasma-carried powders. |
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